rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 14 1006 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u. s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 8 r f cm 3326 45 - 1218 mhz gaas/gan power doubler module the rfcm 3326 is a power doubler amplifier smd module. the part employs gaas phemt die and gan hemt die, has high output capability, and is operated from 45mhz to 12 18 mhz. it provides excellent linearity and superior return loss performance with low noise and optimal reliability. dc current of the device can be externally adjusted for optimum disto rtion performance versus power consumption over a wide range of output level. rfcm 3326 input output current setting v + temperature sensing functional block diagram ordering information rfcm 3326 sb sample bag with 5 pieces rfcm 3326 sq sample bag with 25 pieces rfcm 3326 sr 7? reel with 100 pieces rfcm 3326 tr7 7? reel with 500 pieces rfcm 3326 tr13 13? reel with 1000 pieces rfcm 3326 pcba - 410 fully assembled evaluation board package: 9 pin, 9.0 mm x 8.0 mm x 1.375mm features ? excellent linearity ? superior return loss performance ? extremely low distortion ? optimal reliability ? low noise ? unconditionally stable under all terminations ? extremely high output capability ? 2 4 .5db min. gain at 1 2 18 mhz ? 450ma max. at 24vdc ? temperature sensing feature application s ? 45mhz to 1 2 18 mhz catv amplifier systems
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 14 1006 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 2 of 8 rf cm3326 absolute maximum rat ings parameter rating unit rf input voltage (single tone; on evaluation board) 75 dbmv dc supply over - voltage (5 minutes) 30 v storage temperature - 40 to +100 c operating mounting base temperature - 30 to +110 c moisture sensitivity level ipc/jedec j - std - 20 msl 3 @260 c caution! esd sensitive device. rohs status based on eu directive 2011/65/eu exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max general performance v+= 24v; t mb =30c; z s =z l =75; i dc =i dc typical power gain 23 .0 23 .5 24 .0 db f=45mhz 24 .5 25 .0 26 .0 db f= 1218 mhz slope [1] 1.0 1.5 2.5 db f=45mhz to 1218 mhz flatness of frequency response 1 db f=45mhz to 1218 mhz (peak to valley) input return loss 20 db f=45mhz to 320mhz 19 db f=320mhz to 640mhz 18 db f=640mhz to 870mhz 16 db f=870mhz to 100 0 mhz 15 db f= 100 0 mh z to 1218 mhz output return loss 20 db f=45mhz to 320mhz 19 db f=320mhz to 640mhz 18 db f=640mhz to 870mhz 17 db f=870mhz to 100 0 mhz 16 db f= 100 0 mh z to 1218 mhz noise figure 3.0 4.0 db f=50mhz to 1218 mhz total current consumption (dc) 430 450 ma
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 14 1006 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 3 of 8 rf cm3326 parameter specification unit condition min typ max distortion data 40mhz to 550mhz v+= 24v; t mb =30c; z s =z l =75; i dc =i dc typical ctb - 73 - 68 dbc v o =6 1 dbmv at 1000mhz, 18db extrapolated tilt, 79 analog channels plus 75 digital channels ( - 6db offset) [2][4] xmod - 6 5 - 60 dbc cso - 7 6 - 70 dbc cin 55 60 db distortion data 40mhz to 550mhz v+= 24v; t mb =30c; z s =z l =75; i dc =i dc typical ctb - 80 dbc v o =6 0dbmv at 1218mhz, 22 db extrapolated tilt, 79 analog channels plus 111 digital channels ( - 6db offset ) [3][4] xmod - 78 dbc cso - 80 dbc cin 59 db 1. the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, ntsc frequency raster: 55.25mhz to 547.25mhz, +4 3 dbmv to +5 2 .4dbmv tilted output level, plus 75 digital channels, - 6db offset relative to the eq uivalent analog carrier. 3. 79 analog channels, ntsc frequency r aster: 55.25mhz to 547.25mhz, +38 dbmv to + 47.4 d bmv tilted output level, plus 111 digital channels, - 6db offset relative to the equivalent analog carrier. 4. composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta. composite triple beat (ctb) - the ctb parameter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (s elective voltmeter method), referenced to 100% modulation of the carrier being tested. carrier to intermodulation noise (cin) - the cin parameter is defined by ansi/scte 17 (test procedure for carrier to noise).
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 14 1006 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 4 of 8 rf cm3326 rfcm 3326 curr ent adjustment the rfcm 3326 can be operated over a wide range of current to provide maximum required performance with minimum current consumption. changing the value of resistor r3 on application circuit allows a variation of the current between 430ma and 330ma (typ.). within the re commended range of current between 430ma and 370ma gain (s21) change is less than 0.2db and noise figure change is less than 0.1db. current versus resistor r3 ( typical values ) device current versus distortion degradation ( typical values ) test condition: v+= 24v; t mb =30c; z s =z l =75 ; v o =61dbmv at 1000mhz, 18db extrapolated tilt , 79 analog channels plus 75 digital channels ( - 6db offset) 320 340 360 380 400 420 440 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 i [ma] r3 [
] 320 340 360 380 400 420 440 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 i [ma] ctb and cin degradation [db] ctb cin device current [ma], typical r3 [ ? ] v+= 24v; t mb =30c; z s =z l
430 1500 410 1400 390 1300 370 1240 350 1150 330 1050
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 14 1006 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 5 of 8 rf cm3326 rfcm 3326 temperature sensing feature the rfcm33 2 6 provides an internal ntc resistor for temperature sensing. this resistor is located right next to the output transistor stage. within the application circuit the ntc is built in a voltag e divider. the output voltage of the voltage divider (vt) can be correlated to the module backside temperature. module backside temperature versus vt ( typical values ) 20 30 40 50 60 70 80 90 100 110 120 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 temperature [ c] vt [mv]
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 14 1006 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 6 of 8 rf cm3326 e valuation board schematic c 8 4 . 7 nf c 3 4 . 7 nf r 5 1 k r 6 1 k c 6 4 . 7 nf c 5 1 . 2 pf c 4 1 . 2 pf r 2 3 k r 3 1 . 5 k r 4 7 . 5 c 2 4 . 7 nf c 10 0 . 3 pf d 2 mm 3 z 5 v 6 t 1 r 1 5 . 1 k d 1 tgl 34 - 33 a c 1 220 pf c 7 4 . 7 nf u 1 rfcm 3326 1 2 3 4 9 8 7 6 5 fb 1 bead 60 t 2 rfxf 0008 v + gnd rf in rf out r 7 dni r 8 dni r 9 dni c 9 dni c 12 dni r 10 dni r 11 dni r 12 dni c 11 0 . 5 pf vt c 13 4 . 7 nf t 1 rfxf 0006 t 3 rfxf 0009 r 13 3 . 3 k evaluation board assembly drawing note: the ground plane of the rfcm 3326 module should be soldered onto a board equipped with as many thermal vias as possible. underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module dc power (up to 10.4 watts). in any case the module backside temperature should not exceed 110c.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 14 1006 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 7 of 8 rf cm3326 evaluation b oard bill of materials (bom) component type value qty designator comment pcb evaluation - board pi816a 1 capacitor 220pf 1 c1 capacitor 4.7nf 6 c2, c3, c6, c7, c8 , c13 capacitor 1.2pf 2 c4, c5 capacitor dni 4 c9, c12 optional to improve matching in application capacitor 0.3 pf 1 c10 optional to improve matching in application capacitor 0.5pf 1 c11 optional to improve matching in application resistor 5.1 k 1 r1 resistor 3 k 1 r2 resistor 1.5k 1 r3 resistor 7.5 1 r4 resistor 1k 2 r5, r6 resistor dni 6 r7 - r12 o ptional to improve matching in application resistor 3.3 k 1 r13 impedance bead 60 @ 100mhz 1 fb1 transient voltage suppressor diode tgl34 - 33a 1 d1 zener diode mm3z5v6t1g 1 d2 transformer rfxf0006 1 t1 transformer rfxf0008 1 t2 transformer rfxf0009 1 t3 dut rfcm 3326 1 u1 pin out 1 2 3 4 9 8 7 6 5 rf in + gnd gnd rf in - rf out + rt v+ gnd rf out - gnd
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 14 1006 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 8 of 8 rf cm3326 pin names and descriptions pin name description 1 rf in + rf amp positive input 2, 3, 6 gnd ground pins 4 rf in - rf amp negative input 5 rf out - rf amp negative output 7 v+ supply voltage, +24v 8 rt ntc output for temperature sensing 9 rf out + rf amp positive output package outline and branding drawing (dimensions in millimeters) 8.0000.100 pin 1 indicator rfcm3326 1.3750.075 0.275 ref molding cap substrate 9.0000.100 a data code (year/week) yyww trace code a a a a a a a a a= 0.600 x 0.600 mm 0.000 0.650 0.650 2x 2.000 2x 2.000 3.700 3.700 1.000 1.000 0.000 3.400 3.400 4x 4.100 5x 4.100 pin1
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